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参数资料
| 型号： | APT12045L2VFR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 28 A, 1200 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 129K |
| 代理商： | APT12045L2VFR |
050-5844
Rev
A
4-2004
APT12045L2VFR
Typical Performance Curves
4V
4.5V
5V
5.5
VGS =15V, 10V, 8V & 6V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON) vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
VDS> ID (ON) x RDS(ON) MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
1
2
3
4
5
6
0
10
20
30
40
50
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
60
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.09
0.08
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Typical Performance Curves
80
70
60
50
40
30
20
10
0
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS = 10V @ ID = 14A
I
D = 14A
V
GS = 10V
0.0367
0.0923
0.0215
0.0627F
0.761F
50.8F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT12045L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT12045L2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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| APT1204R7BFLLG | 功能描述:MOSFET N-CH 1200V 3.5A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1204R7BLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V RDS(ON):4.7Ohms ID(cont:)3Amps|MOSFETs |
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