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参数资料
| 型号： | APT13GP120KG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 41 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 156K |
| 代理商： | APT13GP120KG |
050-7415
Rev
B
2-2004
TO-220
G C
E
APT13GP120K
1200V
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for very
fast switching, making it ideal for high frequency, high voltage switch-mode
power supplies and tail current sensitive applications. In many cases, the
POWER MOS 7 IGBT provides a lower cost alternative to a Power MOSFET.
Low Conduction Loss
100 kHz operation @ 600V, 10A
Low Gate Charge
50 kHz operation @ 600V, 16A
Ultrafast Tail Current shutoff
RBSOA Rated
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
RBSOA
PD
TJ,TSTG
TL
APT13GP120K
1200
±20
±30
41
20
50
50A @ 960V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
@ TC = 150°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7 IGBT
G
C
E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT13GP120S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT13GP120SG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT14050JVFR | 功能描述:MOSFET N-CH 1400V 23A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT14F100B | 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT14F100B_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel FREDFET |
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