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参数资料
| 型号： | APT13GP120KG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 41 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 156K |
| 代理商： | APT13GP120KG |
050-7415
Rev
B
2-2004
TYPICAL PERFORMANCE CURVES
APT13GP120K
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TC = 125°C
TC = 25°C
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
TJ = 25°C
TJ = -55°C
TJ = 125°C
250s PULSE TEST
<0.5 % DUTY CYCLE
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE = 15V)
FIGURE 2, Output Characteristics (V
GE = 10V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, JUNCTION TRMPERATURE (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
0
1
234
5
6
0
1
2
3
456
0
1
2
3
4
5
6
7
8
9
0
10
20
30
40
50
60
6
8
10
12
14
16
-55
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75 100 125 150
40
35
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
0
40
35
30
25
20
15
10
5
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
IC = 13A
TJ = 25°C
TC = 25°C
TC = -55°C
TC = 125°C
TC = -55°C
VCE = 960V
VCE = 240V
VCE = 600V
IC= 6.5A
IC = 13A
IC = 26A
IC= 6.5A
IC = 13A
IC = 26A
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