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参数资料
| 型号： | APT12045L2VR |
| 元件分类： | JFETs |
| 英文描述： | 28 A, 1200 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 65K |
| 代理商： | APT12045L2VR |
DYNAMIC CHARACTERISTICS
APT12045L2VR
050-5993
Rev
A
10-2002
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 9.47mH, RG = 25, Peak IL = 26A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
26A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 600V
I
D
= 14A @ 25°C
V
GS
= 15V
V
DD
= 600V
I
D
= 14A @ 25°C
R
G
= 0.6
MIN
TYP
MAX
11368
948
494
604
42
308
16
15
83
14
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
28
112
1.3
1290
31
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.15
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -28A)
Reverse Recovery Time (I
S
= -28A, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -28A, dl
S
/dt = 100A/s)
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