参数资料
型号: APT12080LVR
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封装: TO-264, 3 PIN
文件页数: 2/4页
文件大小: 61K
代理商: APT12080LVR
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 0.6
MIN
TYP
MAX
6500
7800
530
740
250
375
325
485
29
45
143
215
16
32
12
24
59
90
12
24
UNIT
pF
nC
ns
APT12080LVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5567
Rev
B
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
16
64
1.3
1080
22
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 19.53mH, RG = 25, Peak IL = 16A
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相关PDF资料
PDF描述
APT12GT60BR 25 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT12GT60BRG 25 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT12GT60BR 25 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT13GP120BSC 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
APT14050JVFR 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APT12080LVRG 制造商:Microsemi Corporation 功能描述:
APT1211 功能描述:三极与 SCR 输出光电耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 输出设备:PhotoTriac 每芯片的通道数量: 绝缘电压:3750 Vrms 正向电流:10 mA 正向电压:1.2 V 最大触发电流:10 mA 关断状态下输出电压-VDRM:600 V 最大连续输出电流: 零交叉电路: 封装:Reel
APT1211A 功能描述:三极与 SCR 输出光电耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 输出设备:PhotoTriac 每芯片的通道数量: 绝缘电压:3750 Vrms 正向电流:10 mA 正向电压:1.2 V 最大触发电流:10 mA 关断状态下输出电压-VDRM:600 V 最大连续输出电流: 零交叉电路: 封装:Reel
APT1211AX 功能描述:三极与 SCR 输出光电耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 输出设备:PhotoTriac 每芯片的通道数量: 绝缘电压:3750 Vrms 正向电流:10 mA 正向电压:1.2 V 最大触发电流:10 mA 关断状态下输出电压-VDRM:600 V 最大连续输出电流: 零交叉电路: 封装:Reel
APT1211AXT 制造商:Panasonic Electric Works 功能描述: