- 您现在的位置：买卖IC网 > PDF目录57945 > APT14050JVFR 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT14050JVFR |
| 元件分类： | JFETs |
| 英文描述： | 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 135K |
| 代理商： | APT14050JVFR |
050-7259
Rev
A
4-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT14050JVFR
1400V 23A 0.500
SOT-227
G
S
D
ISOTOP
"UL Recognized"
FREDFET
APT Website - http://www.advancedpower.com
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode
Avalanche Energy Rated
Lower Leakage
Popular SOT-227 Package
Faster Switching
POWER MOS V
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 11.5A)
Zero Gate Voltage Drain Current (V
DS = 1400V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 1120V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1400
0.500
250
1000
±100
24
APT14050JVFR
1400
23
92
±30
±40
694
5.56
-55 to 150
300
23
50
3600
相关PDF资料 |
PDF描述 |
|---|---|
| APT14050JVFR | 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT150GN60B2 | 220 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP90BDF1 | 43 A, 900 V, N-CHANNEL IGBT, TO-247AD |
| APT15GT120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT15GT60BRDQ1 | 42 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT14F100B | 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT14F100B_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel FREDFET |
| APT14F100S | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1000V 14A D3PAK |
| APT14M100B | 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT14M100B_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel MOSFET |
发布紧急采购，3分钟左右您将得到回复。