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参数资料
| 型号： | APT12GT60KR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 391K |
| 代理商： | APT12GT60KR |
052-6201
Rev
E
12-2005
APT12GT60KR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,THRESHOLD
VOLTAGE
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
30
25
20
15
10
5
0
30
25
20
15
10
5
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
1
2
3
4
5
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
6
8
10
12
14
16
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
50
45
40
35
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
35
30
25
20
15
10
5
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
9V
8V
7V
10V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 20A
I
C = 10A
I
C = 5A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 20A
I
C = 10A
I
C = 5A
T
J = 125°C
T
J = 25°C
T
J = -55°C
13V
11V
V
CE = 480V
V
CE = 300V
V
CE = 120V
IC = 10A
TJ = 25°C
VGE = 15V
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