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参数资料
| 型号： | APT12GT60KRG |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 391K |
| 代理商： | APT12GT60KRG |
052-6201
Rev
E
12-2005
APT12GT60KR(G)
TYPICAL PERFORMANCE CURVES
1.20
1.00
0.80
0.60
0.40
0.20
0
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
1,000
500
100
50
10
35
30
25
20
15
10
5
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100 200
300
400 500
600
700
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
F
MAX
,OPERATING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 10
280
100
50
10
C
res
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
C
oes
C
ies
0.422
0.427
0.312
0.0004
0.0028
0.0451
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
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