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参数资料
| 型号： | APT15GT120BRDQ1 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 9/9页 |
| 文件大小： | 1011K |
| 代理商： | APT15GT120BRDQ1 |
052-6267
Rev
C
12-2005
APT15GT120BRDQ1(G)
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
and 0.25 I
TO-247 Package Outline
e1
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT10078BLL
相关PDF资料 |
PDF描述 |
|---|---|
| APT15GT120SR | 36 A, 1200 V, N-CHANNEL IGBT |
| APT15GT120BR | 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GT60KR | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT15GT120BRDQ1G | 功能描述:IGBT 1200V 36A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GT120BRG | 功能描述:IGBT 1200V 36A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GT120SRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT15GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
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