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参数资料
| 型号： | APT15GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 78K |
| 代理商： | APT15GT60BR |
052-6209
Rev
C
5-2002
APT15GT60BR
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.5VCES
IC = IC2
RG = 10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
810
930
130
190
52
90
74
110
58
34
50
920
27
50
92
140
123
250
11
21
13
30
110
170
148
300
160
320
465
930
625
1250
11
20
13
30
91
140
67
130
395
790
3
UNIT
pF
nC
ns
J
ns
J
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = IC2, VCC = 50V, RGE = 25
, L = 200H, T
j = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
°C/W
oz
gm
MIN
TYP
MAX
1.0
40
0.22
5.90
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Symbol
RΘJC
RΘJA
WT
相关PDF资料 |
PDF描述 |
|---|---|
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GT60KR | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GT60KRG | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT17M120JCU2 | 17 A, 1200 V, 0.816 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT17N80CC3 | 11.5 A, 800 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT15GT60BRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT15GT60BRDQ1G | 功能描述:IGBT 600V 42A 184W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GT60BRG | 功能描述:IGBT 600V 42A 184W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GT60KR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
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