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参数资料
| 型号： | APT20GF120BR |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT is a new generation of high voltage power IGBTs. |
| 中文描述： | 该快速IGBT是一种高压IGBT的新一代。 |
| 文件页数： | 3/5页 |
| 文件大小： | 74K |
| 代理商： | APT20GF120BR |
0
APT20GF120BR
C
I
C
,
I
C
,
V
G
,
I
C
,
I
C
,
T
C
=+25°C
T
=+150°C
SINGLE PULSE
250μSec. Pulse Test
V
GE
= 15V
I
C
= I
T
J
= +25°C
f = 1MHz
9V
11V
9V
C
ies
C
res
13V
7V
13V
11V
7V
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.05
D=0.5
0.2
0.02
0.01
SINGLE PULSE
C
oes
V
GE
=17 & 15V
Z
J
,
°
C
V
GE
=17 & 15V
T
C
=-55
°
C
T
C
=+25
°
C
T
C
=+150
°
C
0.1
OPERATION
LIMITED
BY
V
CE
(SAT)
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25
°
C)
60
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T
J
= 150
°
C)
100
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
2,000
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
20
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Q
, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
100μS
1mS
10mS
50
40
30
20
10
0
50
10
5
1
16
12
8
4
0
50
40
30
20
10
0
40
30
20
10
0
1,000
500
100
50
10
1.0
0.5
0.1
0.05
0.01
0.005
0.001
V
CE
=240V
V
CE
=600V
0
4
8
12
16
20
0
4
8
12
16
20
0
2
4
6
8
1
5
10
50 100
1200
0.01
0.1
1.0
10
50
0
40
80
120
160
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
相关PDF资料 |
PDF描述 |
|---|---|
| APT20GF120BRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GF120KR | The Fast IGBT is a new generation of high voltage power IGBTs. |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20GF120BRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GF120BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT20GF120BRDQ1G | 功能描述:IGBT 1200V 36A 200W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GF120BRG | 功能描述:IGBT 1200V 32A 200W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GF120KR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
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