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参数资料
| 型号： | APT20GS60KR(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 37 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 605K |
| 代理商： | APT20GS60KR(G) |
Symbols
Parameter
Test Conditions
Min
Typ
Max
Unit
gfs
Forward Transconductance
VCE = 50V, IC = 20A
-
12
-
S
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
-
1085
-
pF
Coes
Output Capacitance
-
100
-
Cres
Reverse Transfer Capacitance
-
65
-
Co(cr)
Reverse Transfer Capacitance
Charge Related 5
VGE = 0V
VCE = 0 to 400V
-
95
-
Co(er)
Reverse Transfer Capacitance
Current Related 6
90
Qg
Total Gate Charge
VGE = 0 to 15V
IC = 20A, VCE = 300V
-
100
-
nC
Qge
Gate-Emitter Charge
-
8
-
Ggc
Gate-Collector Charge
-
48
-
td(on)
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
TJ = 25°C, VCC = 400V,
IC = 20A
RG = 9.1 7, VGG = 15V
-
8
-
ns
tr
Rise Time
-
14
-
td(off)
Turn-Off Delay Time
-
130
-
tf
Fall Time
-
12
-
Eon1
Turn-On Switching Energy 8
-
TBD
-
mJ
Eon2
Turn-On Switching Energy 9
-
295
-
Eoff
Turn-Off Switching Energy 10
-
200
-
td(on)
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
TJ = 125°C, VCC = 400V,
IC = 20A
RG = 9.1 7, VGG = 15V
-
8
-
ns
tr
Rise Time
-
14
-
td(off)
Turn-Off Delay Time
-
145
-
tf
Fall Time
-
23
-
Eon1
Turn-On Switching Energy 8
-
TBD
-
mJ
Eon2
Turn-On Switching Energy 9
-
465
-
Eoff
Turn-Off Switching Energy 10
-
300
-
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250A
600
-
V
VBR(ECS)
Emitter-Collector Breakdown Voltage
VGE = 0V, IC = 1A
-
25
-
V
BR(CES)/T
J
Breakdown Voltage Temperature Coeff
Reference to 25°C, I
C = 250A
-
0.60
-
V/°C
VCE(ON)
Collector-Emitter On Voltage 4
VGE = 15V
IC = 20A
TJ = 25°C
-
2.8
3.15
V
TJ = 125°C
-
3.25
-
VGE(th)
Gate-Emitter Threshold Voltage
VGE = VCE, IC = 1mA
3
4
5
VGE(th)/TJ Threshold Voltage Temp Coeff
-
6.7
-
mV/°C
ICES
Zero Gate Voltage Collector Current
VCE = 600V,
VGE = 0V
TJ = 25°C
-
25
A
TJ = 125°C
-
1000
IGES
Gate-Emitter Leakage Current
VGE = ±20V
-
±100
nA
Static Characteristics
TJ = 25°C unless otherwise specied
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT20GS60KR(G)
052-6306
Rev
A
8-2007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20GS60SRDQ1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60SRDQ1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GT60AR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
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