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参数资料
| 型号： | APT20GS60KR(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 37 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 605K |
| 代理商： | APT20GS60KR(G) |
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
25
50
75
100
125
10
8
6
4
2
0
40
35
30
25
20
15
10
5
0
1400
1200
1000
800
600
400
200
0
2000
1500
1000
500
0
180
160
140
120
100
80
60
40
20
0
30
25
20
15
10
5
0
700
600
500
400
300
200
100
0
1400
1200
1000
800
600
400
200
0
E
on2,40A
E
off,40A
E
off,20A
E
on2,20A
E
on2,10A
E
off,10A
R
G = 9.1, L = 100H, VCE = 400V
V
CE = 400V
T
J = 25°C, TJ =125°C
R
G = 9.1
L = 100H
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
VCE = 400V
VGE = +15V
RG = 9.1
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
VCE = 400V
VGE = +15V
RG = 9.1
R
G = 9.1, L = 100H, VCE = 400V
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 9.1
L = 100H
VCE = 400V
VGE = +15V
RG = 9.1
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
E
on2,40A
E
off,40A
E
on2,20A
E
off,20A
E
on2
,10A
E
off,10A
VCE = 400V
VGE = +15V
TJ = 125°C
TYPICAL PERFORMANCE CURVES
APT20GS60KR(G)
052-6306
Rev
A
8-2007
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相关代理商/技术参数 |
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|---|---|
| APT20GS60SRDQ1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60SRDQ1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GT60AR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
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