参数资料
型号: APT20M36BFLL
元件分类: JFETs
英文描述: 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封装: TO-247, 3 PIN
文件页数: 4/5页
文件大小: 169K
代理商: APT20M36BFLL
050-7048
Rev
C
7-2004
APT20M36 BFLL_SFLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50
100 200
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC=+25°C
TJ=+150°C
SINGLE PULSE
260
100
50
10
5
1
16
14
12
10
8
6
4
2
0
I
D = 65A
10,000
5,000
1,000
500
100
50
10
200
100
50
10
5
1
OPERATIONHERE
LIMITEDBYRDS(ON)
Crss
Coss
Ciss
10mS
100S
1mS
VDS=100V
VDS=40V
VDS=160V
TJ=+150°C
TJ=+25°C
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 133V
R
G
= 5
T
J
= 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
V
DD = 133V
R
G = 5
T
J = 125°C
L = 100H
30
40
50
60
70
80
90
100
30
40
50
60
70
80
90
100
30
40
50
60
70
80
90
100
0
5
10 15 20 25 30
35 40 45 50
45
40
35
30
25
20
15
10
5
0
1200
1000
800
600
400
200
0
120
100
80
60
40
20
0
1000
800
600
400
200
0
V
DD = 133V
I
D = 65A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
V
DD = 133V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
相关PDF资料
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APT20M36SFLLG 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
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