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参数资料
| 型号： | APT25GP120B |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 69 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 95K |
| 代理商： | APT25GP120B |
050-7411
Rev
B
4-2003
APT25GP120B
1200V
A new generation of high voltage power IGBTs.
Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7 IGBT provides a lower cost alternative to a Power
MOSFET.
Low Conduction Loss
100 kHz operation @ 800V,11A
Low Gate Charge
50 kHz operation @ 800V, 19A
Ultrafast Tail Current shutoff
RBSOA Rated
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage
(VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
RBSOA
PD
TJ,TSTG
TL
APT25GP120B
1200
±20
±30
69
33
90
90A @ 960V
417
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
@ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
POWER MOS 7
IGBT
相关PDF资料 |
PDF描述 |
|---|---|
| APT25GP120B | 69 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GP120BG | 69 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GP90BDF1 | 72 A, 900 V, N-CHANNEL IGBT, TO-247AD |
| APT25GP90BDQ1 | 72 A, 900 V, N-CHANNEL IGBT, TO-247 |
| APT25GP90BDQ1 | 72 A, 900 V, N-CHANNEL IGBT, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GP120BD1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
| APT25GP120BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP120BDQ1G | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP120BG | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP90B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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