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参数资料
| 型号： | APT25GP120B |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 69 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 95K |
| 代理商： | APT25GP120B |
050-7411
Rev
B
4-2003
APT25GP120B
T
J
= 125°C, VGE = 10V or 15V
VCE = 600V
RG = 5
L = 100 H
VGE= 15V
VGE= 10V
V
GE
=15V,TJ=125°C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
10
20
30
40
50
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
0
25
50
75
100
125
V
GE
=10V,TJ=125°C
V
GE
=15V,TJ=25°C
V
GE
=10V,TJ=25°C
T
J
= 25° or 125°C,VGE = 10V
T
J
= 25°C, VGE = 10V or 15V
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
3500
3000
2500
2000
1500
1000
500
0
T
J
= 25° or 125°C,VGE =15V
T
J
= 125°C, VGE = 10V or 15V
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
Eon2,50A
Eoff,50A
Eon2,25A
Eoff, 25A
Eon2,12.5A
Eoff,12.5A
T
J
= 125°C,VGE =10V
T
J
= 125°C,VGE =15V
T
J
= 25°C,VGE =10V
T
J
= 25°C, VGE = 10V or 15V
T
J
= 25°C,VGE =15V
25
20
15
10
5
0
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4500
4000
3500
3000
2500
2000
1500
1000
500
0
V
CE = 600V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
R
G
= 5
, L = 100H, V
CE = 600V
R
G
= 5
, L = 100H, V
CE = 600V
Eon2, 50A
Eoff, 50A
Eon2, 25A
Eoff, 25A
Eon2, 12.5A
Eoff, 12.5A
VCE = 600V
VGE = +15V
RG = 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GP120BD1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
| APT25GP120BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP120BDQ1G | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP120BG | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP90B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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