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参数资料
| 型号： | APT20N60BC3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 200K |
| 代理商： | APT20N60BC3 |
050-7145
Rev
D
4-2006
APT20N60B_SC3
Typical Performance Curves
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
4.5V
5V
5.5V
4V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
6V
6.5V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
NORMALIZED TO
V
GS = 10V @ 11.9A
60
50
40
30
20
10
0
25
20
15
10
5
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
D = 11.9A
V
GS = 10V
0.259
0.341
0.00500
0.135
Power
(watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
相关PDF资料 |
PDF描述 |
|---|---|
| APT20N60SCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20N60BCFG | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BCFG | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20N60BC3G | 功能描述:MOSFET N-CH 600V 20.7A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT20N60BCF | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60BCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60SC3 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 20.7A 3-Pin(2+Tab) D3PAK |
| APT20N60SC3G | 功能描述:MOSFET N-CH 600V 20.7A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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