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参数资料
| 型号： | APT20N60BCF |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 190K |
| 代理商： | APT20N60BCF |
050-7235
Rev
A
5-2005
FINAL DATA SHEET WITH MOS 7 FORMAT
600V 20A 0.220
APT20N60BCF
APT20N60SCF
APT20N60BCFG*
APT20N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 13A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 20A, TJ = 125°C)
Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
APT20N60BCF(G)_SCF(G)
600
20
13
60
±30
208
1.67
-55 to 150
260
80
20
1
690
Ultra Low RDS(ON)
Intrinsic Fast-Recovery Body Diode
Low Miller Capacitance
Extreme Low Reverse Recovery Charge
Ultra Low Gate Charge, Qg
Ideal For ZVS Applications
Avalanche Energy Rated
Popular TO-247 or Surface Mount D3 Package
Extreme dv/dt Rated
Super Junction FREDFET
MIN
TYP
MAX
600
0.220
2.1
1700
±100
3
4
5
APT Website - http://www.advancedpower.com
C
Power Semiconductors
O
O LMOS
G
D
S
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
TO-247
D3PAK
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20N60BCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60SC3 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 20.7A 3-Pin(2+Tab) D3PAK |
| APT20N60SC3G | 功能描述:MOSFET N-CH 600V 20.7A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT20N60SCF | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60SCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
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