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参数资料
| 型号： | APT20N60SC3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 200K |
| 代理商： | APT20N60SC3G |
APT20N60B_SC3
050-7145
Rev
D
4-2006
Typical Performance Curves
Crss
Ciss
Coss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
600
0
10
20
30
40
50
0
20
40
60
80
100
120 140
0.3
0.5
0.7
0.9
1.1
1.3
1.5
62
10
5
1
0.6
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ=+25°C
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10 15 20 25 30 35 40 45 50
V
DD = 400V
I
D = 20.7A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
VDS=300V
VDS=120V
VDS=480V
I
D = 20.7A
td(on)
td(off)
Eon
Eoff
100
90
80
70
60
50
40
30
20
10
0
600
500
400
300
200
100
0
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
20,000
10,000
1,000
100
10
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
50
40
30
20
10
0
700
600
500
400
300
200
100
0
相关PDF资料 |
PDF描述 |
|---|---|
| APT20N60BC3G | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
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| APT20N60SCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
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