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参数资料
| 型号： | APT20N60SC3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 5/5页 |
| 文件大小： | 200K |
| 代理商： | APT20N60SC3G |
050-7145
Rev
D
4-2006
APT20N60B_SC3
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
IC
D.U.T.
APT15DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
TJ = 125 C
Gate Voltage
Collector Current
Collector Voltage
90%
10%
0
t
d(off)
t
f
Switching Energy
T
J = 125 C
Collector Current
Collector Voltage
Gate Voltage
10%
td(on)
5%
10%
5 %
tr
90%
Switching Energy
相关PDF资料 |
PDF描述 |
|---|---|
| APT20N60BC3G | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BC3 | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BC3 | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60SCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20N60BCFG | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20N60SCF | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60SCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20SCD120B | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 68A 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Schottky 1.2KV 68A |
| APT20SCD120BHB | 制造商:Microsemi Corporation 功能描述: |
| APT20SCD120S | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 68A 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Schottky 1.2KV 68A |
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