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参数资料
| 型号： | APT25GN120S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 67 A, 1200 V, N-CHANNEL IGBT |
| 封装： | D3PAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 148K |
| 代理商： | APT25GN120S |
050-7600
Re
v
E
9-2009
APT25GN120B_S(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 150A)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Integrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
A
nA
Ω
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT25GN120B(G)
1200
±30
67
33
75
75A @ 1200V
272
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
1200
5
5.8
6.5
1.4
1.7
2.1
1.9
100
TBD
600
8
G
C
E
1200V
APT25GN120B
APT25GN120S
APT25GN120BG* APT25GN120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefcient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplies gate drive design and minimizes losses.
1200V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
Integrated Gate Resistor: Low EMI, High Reliability
TO
-24
7
G
C
E
D3PAK
G
C
E
(S)
(B)
Microsemi Website - http://www.microsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| APT25GN120B | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GP120BDF1 | 69 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GP120BDQ1 | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GP120BDQ1G | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GP120BDQ1G | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GN120SG | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 67A 272W D3PAK 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single |
| APT25GP120B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
| APT25GP120BD1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
| APT25GP120BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP120BDQ1G | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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