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参数资料
| 型号： | APT25GP120BDF1 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 69 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 196K |
| 代理商： | APT25GP120BDF1 |
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MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2001
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
a low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
RDS(on)1 = 45 m
MAX. (VGS = 10 V, ID = 11 A)
Low gate charge
QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)
Built-in G-S protection diode
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±16
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±22
A
Drain Current (pulse)
Note1
ID(pulse)
±45
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation
Note2
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note3
IAS
10
A
Single Avalanche Energy
Note3
EAS
10
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25
, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3507-ZK
TO-252 (MP-3ZK)
相关PDF资料 |
PDF描述 |
|---|---|
| APT25GP120BDQ1 | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GP120BDQ1G | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GP120BDQ1G | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GP120BDQ1 | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GT120BRDQ2 | 54 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GP120BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP120BDQ1G | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP120BG | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP90B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDF1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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