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参数资料
| 型号： | APT26GU30B |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 47 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 166K |
| 代理商： | APT26GU30B |
050-7459
Rev
B
4-2004
APT26GU30B
TYPICAL PERFORMANCE CURVES
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
SSOA rated
Low Gate Charge
Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
300
3
4.5
6
1.5
2.0
1.5
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT26GU30B
300
±20
±30
47
26
85
85A @ 300V
187
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
G
C
E
POWER MOS 7 IGBT
TO-247
G
C
E
APT26GU30B
300V
相关PDF资料 |
PDF描述 |
|---|---|
| APT26GU30B | 47 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| APT26GU30K | 47 A, 300 V, N-CHANNEL IGBT, TO-220AB |
| APT26GU30KG | 47 A, 300 V, N-CHANNEL IGBT, TO-220AB |
| APT26GU30SA | 47 A, 300 V, N-CHANNEL IGBT, TO-263AB |
| APT26GU30K | 47 A, 300 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT26GU30K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT26GU30SA | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT26M100JCU2 | 功能描述:MOSFET N CH 1000V 26A SIC SOT227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 8™ 标准包装:10 系列:* |
| APT26M100JCU3 | 制造商:Microsemi Corporation 功能描述:MOD MOSFET DIODE 1000V SOT227 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT27 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
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