参数资料
型号: APT26GU30B
元件分类: IGBT 晶体管
英文描述: 47 A, 300 V, N-CHANNEL IGBT, TO-247AD
封装: TO-247, 3 PIN
文件页数: 2/6页
文件大小: 166K
代理商: APT26GU30B
050-7459
Rev
B
4-2004
APT26GU30B
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 150V
IC = 13A
TJ = 150°C, RG = 5, VGE =
15V, L = 100H,VCE = 300V
Inductive Switching (25°C)
VCC = 200V
VGE = 15V
IC = 13A
RG = 20
TJ = +25°C
Inductive Switching (125°C)
VCC = 200V
VGE = 15V
IC = 13A
RG = 20
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
MIN
TYP
MAX
1200
120
6
7.0
37
8
10
85
11
14
60
55
TBD
48
60
11
14
70
100
TBD
80
95
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
°C/W
gm
MIN
TYP
MAX
0.67
N/A
5.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2 test circuit. (See Figures 21, 22.)
6E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关PDF资料
PDF描述
APT26GU30B 47 A, 300 V, N-CHANNEL IGBT, TO-247AD
APT26GU30K 47 A, 300 V, N-CHANNEL IGBT, TO-220AB
APT26GU30KG 47 A, 300 V, N-CHANNEL IGBT, TO-220AB
APT26GU30SA 47 A, 300 V, N-CHANNEL IGBT, TO-263AB
APT26GU30K 47 A, 300 V, N-CHANNEL IGBT, TO-220AB
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