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参数资料
| 型号： | APT26M100JCU3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 1000 V, 0.396 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 5/5页 |
| 文件大小： | 109K |
| 代理商： | APT26M100JCU3 |
APT26M100JCU3
APT
26M
100JCU3
–
Rev
0
September
,2009
www.microsemi.com
5- 5
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
4
8
12
16
20
0
0.5
11.5
22.5
33.5
VF Forward Voltage (V)
I F
Forwa
rd
Current
(A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
25
50
75
100
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
I R
Revers
e
Cu
rren
t(
A)
Capacitance vs.Reverse Voltage
0
100
200
300
400
500
600
700
1
10
100
1000
VR Reverse Voltage
C
,C
a
pa
cit
a
nce
(
p
F)
ISOTOP is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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