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参数资料
| 型号： | APT30GP60B2DL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, TMAX-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 199K |
| 代理商： | APT30GP60B2DL |
052-6355
Rev
A
7-2008
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
275
2750
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 1.0mA)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 30A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 30A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
Ratings
600
±20
±30
100
49
120
120A @ 600V
463
-55 to 150
300
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 25°C
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high
frequency, high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Resonant Mode Combi IGBT
C
E
G
Features
Low Conduction Loss
Low Gate Charge
Ultrafast Tail Current shutoff
Low forward Diode Voltage (V
F)
Ultrasoft Recovery Diode
SSOA Rated
RoHS Compliant
Typical Applications
Induction Heating
Welding
Medical
High Power Telecom
Resonant Mode Phase Shifted
Bridge
Microsemi Website - http://www.microsemi.com
UNIT
Volts
Amps
Watts
°C
Volts
UNIT
μA
nA
APT30GP60B2DL(G)
APT30GP60LDL(G)
600V, 30A, VCE(ON) = 2.2V Typical
G
C
E
G
C
E
相关PDF资料 |
PDF描述 |
|---|---|
| APT30GP60LDL | 100 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT30GP60S | 100 A, 600 V, N-CHANNEL IGBT |
| APT30GP60B | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30GS60BRDL | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30GT60KR | 64 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GP60B2DLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TMAX 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GP60BD1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):49Amps|Ultrafast IGBT Family |
| APT30GP60BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT30GP60BDQ1G | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT30GP60BG | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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