参数资料
型号: APT30GP60B
元件分类: IGBT 晶体管
英文描述: 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
封装: TO-247, 3 PIN
文件页数: 1/6页
文件大小: 211K
代理商: APT30GP60B
050-7400
Rev
E
9-2005
APT30GP60B
APT30GP60S
600V
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7 IGBT provides a lower cost alternative to a Power
MOSFET.
Low Conduction Loss
100 kHz operation @ 400V, 37A
Low Gate Charge
200 kHz operation @ 400V, 24A
Ultrafast Tail Current shutoff
SSOA rated
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT30GP60B_S
600
±20
±30
100
49
120
120A @ 600V
463
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
@ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
G
C
E
POWER MOS 7 IGBT
TO
-24
7
G
C
E
D3PAK
G
C
E
B
S
相关PDF资料
PDF描述
APT30GS60BRDL 54 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30GT60KR 64 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT30GT60KRG 64 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT30M30JFLL 88 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M30LFLL 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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