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参数资料
| 型号： | APT30GP60B |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 211K |
| 代理商： | APT30GP60B |
050-7400
Rev
E
9-2005
APT30GP60B_S
Figure 22, Turn-on Switching Waveforms and Definitions
10 %
5 %
10%
t
d(on)
t
r
90%
5 %
Gate Voltage
Collector Voltage
Collector Current
Switching Energy
T
J = 125 C
Figure 23, Turn-off Switching Waveforms and Definitions
T
J = 125 C
Collector Current
Collector Voltage
Gate Voltage
90%
t
f
t
d(off)
0
10%
Switching Energy
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
*DRIVER SAME TYPE AS D.U.T.
IC
VCLAMP
100uH
VTEST
A
B
D.U.T.
DRIVER*
VCE
Figure 24, EON1 Test Circuit
IC
A
D.U.T.
APT15DF60
VCE
Figure 21, Inductive Switching Test Circuit
VCC
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Collector (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
D
3PAKPackageOutline
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| APT30GS60BRDL | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
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| APT30M30JFLL | 88 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GP60B2DL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GP60B2DLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TMAX 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GP60BD1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):49Amps|Ultrafast IGBT Family |
| APT30GP60BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT30GP60BDQ1G | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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