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参数资料
| 型号： | APT30GP60B |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 211K |
| 代理商： | APT30GP60B |
050-7400
Rev
E
9-2005
APT30GP60B_S
T
J = 125°C, VGE = 10V or 15V
VCE = 400V
RG = 5
L = 100 H
VGE= 15V
VGE= 10V
V
GE =15V,TJ=125°C
VCE = 400V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
R
G = 5, L = 100
H, VCE = 400V
R
G = 5, L = 100
H, VCE = 400V
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
0
1020
3040
5060
0
25
50
75
100
125
V
GE =10V,TJ=125°CV
GE =15V,TJ=25°C
V
GE =10V,TJ=25°C
T
J = 25°C, VGE = 10V or 15V
100
90
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
1600
1200
800
400
0
T
J = 125°C, VGE = 10V or 15V
VCE = 400V
VGE = +15V
RG = 5
VCE = 400V
VGE = +15V
RG = 5
VCE = 400V
VGE = +15V
RG = 5
Eon2, 60A
Eoff, 60A
Eon2, 30A
Eoff, 30A
Eon2, 15A
Eoff, 15A
Eon2,60A
Eoff,60A
Eon2,30A
Eoff, 30A
Eon2,15A
Eoff, 15A
VCE = 400V
VGE = +15V
TJ = 125°C
T
J = 125°C,VGE =10V
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =10V
T
J = 25°C, VGE = 10V or 15V
T
J = 25°C,VGE =15V
25
20
15
10
5
0
50
40
30
20
10
0
1400
1200
1000
800
600
400
200
0
2500
2000
1500
1000
500
0
T
J = 25 or 125°C,VGE = 15V
T
J = 25 or 125°C,VGE = 10V
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| APT30GP60BDQ1G | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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