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参数资料
| 型号： | APT30GP60LDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 199K |
| 代理商： | APT30GP60LDL |
052-6355
Rev
A
7-2008
300
100
50
10
0
10
20
30
40
50
60
140
120
100
80
60
40
20
0
C,
CAP
ACIT
ANCE
(
P
F)
I C
,COLLECT
OR
CURRENT
(A)
F
MAX
,OPERA
TING
FREQUENCY
(kHz)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating
Frequency vs Collector Current
C
res
C
ies
C
oes
TYPICAL PREFORMANCE CURVES
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 400V
R
G = 5 Ω
APT30GP60B2DL_LDL(G)
max
max1
max 2
max1
d(on )
r
d(off )
f
diss
cond
max 2
on 2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
PP
f
EE
TT
P
Rθ
=
++
+
=
+
=
0.30
0.25
0.20
0.15
0.10
0.05
0
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.0196
0.107
0.144
0.00500F
0.0132F
0.135F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
J/°C
相关PDF资料 |
PDF描述 |
|---|---|
| APT30GP60S | 100 A, 600 V, N-CHANNEL IGBT |
| APT30GP60B | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30GS60BRDL | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30GT60KR | 64 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT30GT60KRG | 64 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GP60LDLG | 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264 |
| APT30GS60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT30GS60BRDQ2G | 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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