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参数资料
| 型号： | APT30GT60BRD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 55 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 108K |
| 代理商： | APT30GT60BRD |
052-6251
Rev
C
4-2002
APT30GT60BRD
G
C
E
TO-247
G
C
E
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
Thunderbolt IGBT & FRED
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
600
345
1.6
2.0
2.5
2.8
250
2000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage
(VCE = VGE, IC = 700A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
MAXIMUM RATINGS (IGBT)
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
A
nA
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Gate Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 95°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current RG = 11 TC = 125°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT30GT60BRD
600
±20
55
30
110
55
198
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT30GT60BRD
600V
55A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT30GT60BRDQ2 | 制造商:APT 功能描述: |
| APT30GT60BRDQ2G | 功能描述:IGBT 600V 64A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT30GT60BRG | 功能描述:IGBT 600V 64A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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