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参数资料
| 型号： | APT30GT60BRD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 55 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 108K |
| 代理商： | APT30GT60BRD |
052-6251
Rev
C
4-2002
APT30GT60BRD
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS (IGBT)
UNIT
°C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.63
0.90
40
0.22
6.1
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.66VCES
IC = IC2
RG = 10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 5
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
1600
2000
250
350
90
140
142
213
11
13
62
93
14
28
64
128
195
292
140
280
15
20
30
60
300
600
40
80
.5
1
1.2
2.4
1.7
3.4
16
32
64
265
530
25
50
1.2
2.4
6
UNIT
pF
nC
ns
mJ
ns
mJ
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 4
Turn-off Switching Energy
Total Switching Losses 4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses 4
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT30GT60BRDQ2 | 制造商:APT 功能描述: |
| APT30GT60BRDQ2G | 功能描述:IGBT 600V 64A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT30GT60BRG | 功能描述:IGBT 600V 64A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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