参数资料
型号: APT30GT60KR
元件分类: IGBT 晶体管
英文描述: 64 A, 600 V, N-CHANNEL IGBT, TO-220AB
封装: TO-220, 3 PIN
文件页数: 4/6页
文件大小: 400K
代理商: APT30GT60KR
052-6204
Rev
E
12-2005
APT30GT60KR(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 10
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 10, L = 100H, VCE = 400V
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 10
L = 100H
16
14
12
10
8
6
4
2
0
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
0
4500
4000
3500
3000
1500
1000
500
0
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
3000
2500
2000
1500
1000
500
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
VCE = 400V
VGE = +15V
RG = 10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 10, L = 100H, VCE = 400V
VCE = 400V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
E
on2,60A
E
off,60A
VCE = 400V
VGE = +15V
TJ = 125°C
E
on2,30A
E
off,30A
E
on2,15A
E
off,15A
E
on2,60A
E
off,60A
E
on2,30A
E
off,30A
E
on2,15A
E
off,15A
相关PDF资料
PDF描述
APT30GT60KRG 64 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT30M30JFLL 88 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M30LFLL 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT30M30B2FLL 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M30B2FLL 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APT30GT60KRG 功能描述:IGBT 600V 64A 250W TO220 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT30M17JFLL 功能描述:MOSFET N-CH 300V 135A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:*
APT30M17JLL 功能描述:MOSFET N-CH 300V 135A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:*
APT30M17JLL_04 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET
APT30M19JVFR 功能描述:MOSFET N-CH 300V 130A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:*