- 您现在的位置：买卖IC网 > PDF目录369365 > APT30M90AVR (Advanced Power Technology Ltd.) Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PDF资料下载
参数资料
| 型号： | APT30M90AVR |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 电源MOS V是一个高电压N新一代通道增强型功率MOSFET。 |
| 文件页数： | 3/4页 |
| 文件大小： | 64K |
| 代理商： | APT30M90AVR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
0
30
60
90
120
150
0
1
2
3
4
5
0
2
4
6
8
0
25
50
75
100
125
150
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
75
100
125 150
-50
-25
0
25
50
75
100
125
150
APT30M90AVR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
60
50
40
30
20
10
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.20
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
60
50
40
30
20
10
0
60
50
40
30
20
10
0
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
0
VGS=10V
VGS=20V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25
°
C
TJ = +125
°
C
TJ = -55
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
VGS=6V, 7V, 10V & 15V
5.5V
4.5V
5V
4V
5.5V
4.5V
5V
4V
VGS=15V
VGS=10V
VGS=7V
6V
相关PDF资料 |
PDF描述 |
|---|---|
| APT40GF120JRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs |
| APT50GF120B2R | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF120JRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF120LR | Thin Film RF/Microwave Capacitor; Capacitance:2.7pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| APT50GF60B2RD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30N60BC6 | 功能描述:MOSFET N-CH 600V 30A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT30N60KC6 | 功能描述:MOSFET N-CH 600V 30A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT30N60SC6 | 制造商:Microsemi Corporation 功能描述:APT30N60SC6 - Bulk |
| APT30S20B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT30S20BCT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
发布紧急采购，3分钟左右您将得到回复。