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参数资料
型号： APT50GF120LR
厂商： Advanced Power Technology Ltd.
英文描述： Thin Film RF/Microwave Capacitor; Capacitance:2.7pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
中文描述： 该快速IGBT是一种高压IGBT的新一代。
文件页数： 1/4页
文件大小： 51K
代理商： APT50GF120LR
G
C
E
0
APT50GF120JRD
1200V
75A
The Fast IGBT
is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
Low Forward Voltage Drop
Low Tail Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
High Freq. Switching to 20KHz
Ultra Low Leakage Current
Fast IGBT
& FRED
SOT-227
G
E
E
C
ISOTOP
"UL Recognized"
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700
μ
A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 125
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125
°
C)
2
Gate-Emitter Leakage Current (V
GE
=
±
20V, V
CE
= 0V)
PRELMNARY
APT50GF120JRD
1200
1200
±
20
75
50
150
100
460
-55 to 150
300
MAXIMUM RATINGS (IGBT)
All Ratings: T
C
= 25
°
C unless otherwise specified.
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.9
3.5
3.4
4.1
1.0
TBD
±
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
°
C
Continuous Collector Current @ T
C
= 90
°
C
Pulsed Collector Current
1
@ T
C
= 25
°
C
Pulsed Collector Current
1
@ T
C
= 90
°
C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
°
C
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 9215 15
FAX: (33) 5 56 4797 61
APT Website - http://www.advancedpower.com
相关PDF资料
PDF描述
APT50GF60B2RD The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF60BR Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT50GF60HR The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60LRD Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT6015JVFR POWER MOS V FREDFET
相关代理商/技术参数
参数描述
APT50GF120LRG 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT50GF60B2RD 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF60BR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60HR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60JCU2 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs
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