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| 型号： | APT50GF60LRD |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| 中文描述： | ⑩的快速IGBT是一种高压IGBT的新一代。 |
| 文件页数： | 1/5页 |
| 文件大小： | 82K |
| 代理商： | APT50GF60LRD |
0
APT50GF60BR
TO-247
GCE
APT50GF60BR
600V
75A
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 5792 1515
FAX: (33)5 56 4797 61
APT Website - http://www.advancedpower.com
G
C
E
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
Low Tail Current
Avalanche Rated
High Freq. Switching to 20KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
MIN
TYP
MAX
600
4.5
5.5
6.5
2.1
2.7
2.2
2.8
0.5
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700μA, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125
°
C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K )
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
°
C
Continuous Collector Current @ T
C
= 90
°
C
Pulsed Collector Current
1
@ T
C
= 25
°
C
RBSOA Clamped Inductive Load Current @ R
g
= 11
Single Pulse Avalanche Energy
2
T
C
= 125
°
C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT50GF60BR
600
600
±20
75
50
160
100
75
300
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°
C
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