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参数资料
| 型号： | APT50GF60LRD |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| 中文描述： | ⑩的快速IGBT是一种高压IGBT的新一代。 |
| 文件页数： | 3/5页 |
| 文件大小： | 82K |
| 代理商： | APT50GF60LRD |
0
APT50GF60BR
C
I
C
,
I
C
,
V
G
,
I
C
,
I
C
,
T
C
=+25
°
C
T
=+150
°
C
SINGLE PULSE
250μSec. Pulse Test
V
GE
= 15V
f = 1MHz
9V
7V
C
ies
C
res
11V
8V
11V
10V
9V
8V
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
T
C
=+25
°
C
T
C
=+150
°
C
Z
J
,
°
C
0.01
D=0.5
0.2
0.1
0.05
0.02
V
GE
=13, 15 & 17V
V
GE
=13, 15 & 17V
10V
T
C
=-55
°
C
C
oes
SINGLE PULSE
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
5
1
10
100
600
0.01
0.1
1.0
10
50
0
40
80
120
160
200
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
100
80
60
40
20
0
100
80
60
40
20
0
10,000
1,000
100
V
CE
=480V
V
CE
=300V
V
CE
=120V
I
C
= I
C2
T
J
= +25
°
C
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25
°
C)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T
J
= 150
°
C)
150
100
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Safe Operating Area
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Q
, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
100μS
1mS
10mS
100
80
60
40
20
0
10
1
20
16
12
8
4
0
OPERATION
HERE
LIMITED
BY
V
CE
(SAT)
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