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| 型号： | APT50GF60LRD |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| 中文描述： | ⑩的快速IGBT是一种高压IGBT的新一代。 |
| 文件页数： | 4/5页 |
| 文件大小： | 82K |
| 代理商： | APT50GF60LRD |
0
APT50GF60BR
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
B
C
,
-50
-25
0
25
T
C
, CASE TEMPERATURE (
°
C)
Figure 9, Maximum Collector Current vs Case Temperature
T
, JUNCTION TEMPERATURE (
°
C)
Figure 10, Breakdown Voltage vs Junction Temperature
R
, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
T
, JUNCTION TEMPERATURE (
°
C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
I
, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14, Typical Load Current vs Frequency
I
C1
0.5 I
C2
I
C2
I
C1
E
on
E
off
E
on
E
off
0.5 I
C2
I
C2
For Both:
Duty Cycle = 50%
T
J
= +125
°
C
T
= +90
°
C
Gate drive as specified
Power dissapation = 83W
I
LOAD
= I
RMS
of fundamental
S
T
V
C
(
V
S
S
S
I
C
,
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +125
°
C
R
G
= 10
V
CC
= 0.66 V
CES
V
GE
= +15V
R
G
= 10
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
50
75
100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
40
50
0.1
1.0
10
100
1000
80
60
40
20
0
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +25
°
C
I
C
= I
C2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
0.7
20
10
5
1
0.5
100
10
1
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