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参数资料
| 型号： | APT30M90AVR |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 300 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 56K |
| 代理商： | APT30M90AVR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50
100
300
.01
.1
1
10
50
0
50
100
150
200
250
0
0.4
0.8
1.2
1.6
2.0
APT30M90AVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
150
100
50
10
5
1
.5
.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
10,000
5,000
1,000
500
100
200
100
50
10
5
1
.5
.1
050-5822
Rev
B
9-2001
OPERATION HERE
LIMITED BY RDS (ON)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
Crss
Coss
Ciss
VDS=150V
VDS=240V
VDS=60V
TJ =+150°C
TJ =+25°C
10s
1ms
10ms
100ms
DC
100s
TO-3 (TO-204AE) Package Outline
22.23 (.875) Max.
6.35 (.250)
9.15 (.360)
Drain
(Case)
Source
Dimensions in Millimeters and (Inches)
Seating
Plane
11.18 (.440)
12.19 (.480)
1.52 (.060)
3.43 (.135)
1.47 (.058)
1.60 (.063)
(2-Places)
16.64 (.655)
17.15 (.675)
29.90 (1.177)
30.40 (1.197)
38.61 (1.52)
39.12 (1.54)
25.15 (0.990)
26.67 (1.050)
10.67 (.420)
11.18 (.440)
5.21 (.205)
5.72 (.225)
3.84 (.151)
4.09 (.161)
(2-Places)
Gate
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30N60BC6 | 功能描述:MOSFET N-CH 600V 30A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT30N60KC6 | 功能描述:MOSFET N-CH 600V 30A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT30N60SC6 | 制造商:Microsemi Corporation 功能描述:APT30N60SC6 - Bulk |
| APT30S20B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT30S20BCT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
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