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参数资料
| 型号： | APT30N60KC6 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 144K |
| 代理商： | APT30N60KC6 |
IC
D.U.T.
APT30DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
Figure 19, Inductive Switching Test Circuit
Figure 17, Turn-on Switching Waveforms and Denitions
Figure 18, Turn-off Switching Waveforms and Denitions
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
TO-220 (K) Package Outline
e3 100% Sn Plated
Source
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Drain
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
Typical Performance Curves
APT30N60KC6
050-721
1
Rev
A
8-2010
相关PDF资料 |
PDF描述 |
|---|---|
| APT31N60SCS | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT31N60SCSG | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT31N60BCS | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT31N60BCSG | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT32GU30B | 55 A, 300 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30N60SC6 | 制造商:Microsemi Corporation 功能描述:APT30N60SC6 - Bulk |
| APT30S20B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT30S20BCT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT30S20BCTG | 功能描述:DIODE SCHOTTKY 2X45A 200V TO-247 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| APT30S20BCTG_05 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
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