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参数资料
型号： APT31N60SCSG
厂商： MICROSEMI POWER PRODUCTS GROUP
元件分类： JFETs
英文描述： 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封装： ROHS COMPLIANT, D3PAK-3
文件页数： 2/5页
文件大小： 276K
代理商： APT31N60SCSG
050-7238
Rev
A
1-2007
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
FINAL DATA SHEET WITH MOS 7 FORMAT
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
APT Reserves the right to change, without notice, the specications and information contained herein.
DYNAMIC CHARACTERISTICS
APT31N60B_SCS(G)
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.5
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as
PAV = EAR*f
3 Starting T
j = +25°C, L = 33.23mH, RG = 25, Peak IL = 11A
4 Pulse Test: Pulse width < 380s, Duty Cycle < 2%
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 5
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 400V
I
D = 18A @ 25°C
RESISTIVE SWITCHING
V
GS = 15V
V
DD = 400V
I
D = 18A @ 25°C
R
G = 3.3
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 18A, RG = 4.3
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 18A, RG = 4.3
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See gures 18, 20.
7 We do not recommend using this CoolMOS product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
MIN
TYP
MAX
3055
3260
28
65
85
14
22
10
5
110
5
290
125
170
100
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 4 (V
GS = 0V, IS = -18A)
Reverse Recovery Time (I
S = -18A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -18A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 7
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
18
93
1.2
450
12
4
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
THERMAL CHARACTERISTICS
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