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参数资料
| 型号： | APT31N60SCSG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 276K |
| 代理商： | APT31N60SCSG |
050-7238
Rev
A
1-2007
APT31N60B_SCS(G)
Scope pics are placed with the place command
and then scaled to 50%
Scope pics are placed with the place command
and then scaled to 50%
T
C =+25°C
T
J =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
C
rss
C
iss
C
oss
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
93
50
10
5
1
.1
16
14
12
10
8
6
4
2
0
204
104
103
102
101
100
200
100
10
1
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100S
1mS
10mS
SWITCHING
ENERGY
(J)
t d(on)
and
t d(off)
(ns)
SWITCHING
ENERGY
(J)
t rand
t f
(ns)
E
on
E
off
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
T
J =+150°C
T
J =+25°C
ID = 18A
t
d(on)
t
d(off)
VDD = 400V
RG = 4.3
TJ = 125°C
L = 100H
VDD = 400V
RG = 4.3
TJ = 125°C
L = 100H
Eon includes
diode reverse recovery.
VDD = 400V
RG = 4.3
TJ = 125°C
L = 100H
t
r
t
f
0
5
10
15
20
25
30
0
5
10
15
20
25
30
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45 50
1
10
100
600
0
50
100
150
200
0 10 20 30 40 50 60 70 80 90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
DS=300V
V
DS=120V
V
DS=480V
180
160
140
120
100
80
60
40
20
0
500
400
300
200
100
0
E
on
E
off
45
40
35
30
25
20
15
10
5
0
400
350
300
250
200
150
100
50
0
VDD = 400V
ID = 18A
TJ = 125°C
L = 100H
Eon includes
diode reverse recovery.
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