参数资料
型号: APT33GF120B2RD
元件分类: IGBT 晶体管
英文描述: 52 A, 1200 V, N-CHANNEL IGBT
封装: TMAX-3
文件页数: 7/8页
文件大小: 113K
代理商: APT33GF120B2RD
APT33GF120B2RD/LRD
052-6254
Rev
C
3-2003
Z
Θ
JC
,THERMAL
IMPEDANCE
t rr
,REVERSE
RECOVERY
TIME
I RRM
,REVERSE
RECOVERY
CURRENT
I F
,FORWARD
CURRENT
(°C/W)
(nano-SECONDS)
(AMPERES)
t fr
,FORWARD
RECOVERY
TIME
K
f,
DYNAMIC
PARAMETERS
Q
rr
,REVERSE
RECOVERY
CHARGE
(nano-SECONDS)
(NORMALIZED)
(nano-COULOMBS)
V
fr
,FORWARD
RECOVERY
VOLTAGE
(VOLTS)
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTE:
DM
JC
C
J=+
DUTY FACTOR D = t12
/
PEAK T
P
x Z
T
P
DM
t
2
t
t1
0
1
2
3
4
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
100
80
60
40
20
0
50
40
30
20
10
0
250
200
150
100
50
0
1.0
0.5
0.1
0.05
0.01
0.005
0.001
TJ = 100°C
VR = 650V
2400
2000
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2000
1600
1200
800
400
0
100
80
60
40
20
0
TJ = 100°C
VR = 650V
TJ = 100°C
VR = 650V
TJ = 100°C
VR = 650V
IF =30A
trr
IRRM
Qrr
TJ = -55°C
TJ = 100°C
TJ = 150°C
15A
30A
60A
15A
30A
60A
30A
15A
Vfr
tfr
TJ = 25°C
trr
Qrr
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
diF /dt, CURRENT SLEW RATE (AMPERES/SEC)
Figure 19, Forward Voltage Drop vs Forward Current
Figure 20, Reverse Recovery Charge vs Current Slew Rate
diF /dt,CURRENTSLEWRATE(AMPERES/SEC)
TJ,JUNCTIONTEMPERATURE(°C)
Figure 21, Reverse Recovery Current vs Current Slew Rate
Figure 22, Dynamic Parameters vs Junction Temperature
diF /dt,CURRENTSLEWRATE(AMPERES/SEC)
Figure 23, Reverse Recovery Time vs Current Slew Rate
Figure 24, Forward Recovery Voltage/Time vs Current Slew Rate
VR, REVERSE VOLTAGE (VOLTS)
Figure 25, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
相关PDF资料
PDF描述
APT33GF120LRD 52 A, 1200 V, N-CHANNEL IGBT, TO-264AA
APT4020SVFR 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
APT4020BVFR 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT4020SVFRG 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
APT4025BN 23 A, 400 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相关代理商/技术参数
参数描述
APT33GF120B2RDQ2 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:FAST IGBT & FRED
APT33GF120B2RDQ2G 功能描述:IGBT 1200V 64A 357W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT33GF120BR 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V VF/Vce(ON):3.2V ID(cont):33Amps|Fast IGBT Family
APT33GF120BRG 功能描述:IGBT 1200V 52A 297W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT33GF120HR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs