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参数资料
| 型号： | APT33GF120B2RDQ2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 64 A, 1200 V, N-CHANNEL IGBT |
| 封装： | T-MAX, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 454K |
| 代理商： | APT33GF120B2RDQ2 |
052-6280
Rev
A
11-2005
APT33GF120B2_LRDQ2(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 4.3
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 4.3, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C, or 125°C
R
G = 4.3
L = 100H
V
GE = 15V
T
J = 25 or 125°C,VGE = 15V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 4.3, L = 100H, VCE = 800V
20
15
10
5
0
70
60
50
40
30
20
10
0
10,000
8,000
6,000
4,000
2,000
0
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
4,000
3,500
3,000
2,500
2,000
1,500
1,000
500
0
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
VCE = 800V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
E
on2,12.5A
E
off,12.5A
VCE = 800V
VGE = +15V
TJ = 125°C
VCE = 800V
VGE = +15V
RG = 4.3
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
E
on2,12.5A
E
off,12.5A
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相关代理商/技术参数 |
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|---|---|
| APT33GF120B2RDQ2G | 功能描述:IGBT 1200V 64A 357W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT33GF120BR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V VF/Vce(ON):3.2V ID(cont):33Amps|Fast IGBT Family |
| APT33GF120BRG | 功能描述:IGBT 1200V 52A 297W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT33GF120HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs |
| APT33GF120LRD | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 1.2KV 52A 3-Pin(3+Tab) TO-264 |
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