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参数资料
| 型号： | APT33GF120B2RDQ2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 64 A, 1200 V, N-CHANNEL IGBT |
| 封装： | T-MAX, 3 PIN |
| 文件页数： | 9/9页 |
| 文件大小： | 454K |
| 代理商： | APT33GF120B2RDQ2 |
052-6280
Rev
A
11-2005
APT33GF120B2_LRDQ2(G)
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT10035BLL
Dimensions in Millimeters and (Inches)
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
e1 SAC: Tin, Silver, Copper
T-MAX (B2) Package Outline
e1 SAC: Tin, Silver, Copper
TO-264 (L) Package Outline
相关PDF资料 |
PDF描述 |
|---|---|
| APT33GF120LRDQ2 | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT33GF120B2RDQ2G | 64 A, 1200 V, N-CHANNEL IGBT |
| APT33GF120LRDQ2 | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT33H60B | 33 A, 600 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| APT33H60S | 33 A, 600 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT33GF120B2RDQ2G | 功能描述:IGBT 1200V 64A 357W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT33GF120BR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1200V VF/Vce(ON):3.2V ID(cont):33Amps|Fast IGBT Family |
| APT33GF120BRG | 功能描述:IGBT 1200V 52A 297W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT33GF120HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs |
| APT33GF120LRD | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 1.2KV 52A 3-Pin(3+Tab) TO-264 |
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