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参数资料
| 型号： | APT33H60S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 600 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, D3PAK, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 262K |
| 代理商： | APT33H60S |
VGS= 7 &,8V
4.5V
T
J = 125°C
T
J = 25°C
T
J = -55°C
VGS = 10V
6V
5V
V
DS> ID(ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 17A
T
J = 125°C
T
J = 25°C
T
J = -55°C
C
oss
C
iss
I
D = 17A
V
DS = 480V
V
DS = 120V
V
DS = 300V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 150°C
T
J = 25°C
TJ = 125°C
T
J = 150°C
C
rss
5.5V
V
GS
,GATE-TO-SOURCE
VOLTAGE
(V)
g fs
,TRANSCONDUCTANCE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(A)
I SD,
REVERSE
DRAIN
CURRENT
(A)
C,
CAPACITANCE
(pF)
I D
,DRAIN
CURRENT
(A)
I D
,DRIAN
CURRENT
(A)
V
DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
Figure 2, Output Characteristics
T
J, JUNCTION TEMPERATURE (°C)
V
GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3, RDS(ON) vs Junction Temperature
Figure 4, Transfer Characteristics
I
D, DRAIN CURRENT (A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5, Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
Q
g, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-55 -25
0
25
50
75 100 125 150
0
1
2
3
4
5
6
7
8
0
10
20
30
40
0
100
200
300
400
500
600
0
50
100
150
200
250
0
0.3
0.6
0.9
1.2
1.5
125
100
75
50
25
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
60
50
40
30
20
10
0
125
100
75
50
25
0
10,000
1000
100
10
125
100
75
50
25
0
APT33H60B_S
050-8137
Rev
A
5-2007
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