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参数资料
| 型号： | APT33N90JCCU2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 136K |
| 代理商： | APT33N90JCCU2 |
APT33N90JCCU2
APT
33N90JCCU2
–
Rev
0
August,
2009
www.microsemi.com
1 – 5
G
S
D
K
ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
900
V
Tc = 25°C
33
ID
Continuous Drain Current
Tc = 80°C
25
IDM
Pulsed Drain current
75
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
120
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
290
W
IAR
Avalanche current (repetitive and non repetitive)
8.8
A
EAR
Repetitive Avalanche Energy
2.9
EAS
Single Pulse Avalanche Energy
1940
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Boost chopper
Super Junction MOSFET
SiC chopper diode
VDSS = 900V
RDSon = 120mΩ max @ Tj = 25°C
ID = 33A @ Tc = 25°C
K
D
G
S
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