参数资料
型号: APT4018BN
元件分类: JFETs
英文描述: 29 A, 400 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件页数: 1/4页
文件大小: 93K
代理商: APT4018BN
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS = 0V, ID = 250 A)
On State Drain Current 2
(V
DS > ID(ON) x RDS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance 2
(V
GS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
0.34
40
UNIT
°C/W
Symbol
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
MIN
TYP
MAX
APT4016BN
400
APT4018BN
400
APT4016BN
31
APT4018BN
29
APT4016BN
0.16
APT4018BN
0.18
250
1000
±100
24
UNIT
Volts
Amps
Ohms
A
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
APT
4016BN
4018BN
400
31
29
124
116
±30
360
2.9
-55 to 150
300
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT4016BN 400V 31.0A 0.16
APT4018BN 400V 29.0A 0.18
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
050-4008
Rev
C
TO-247
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
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