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参数资料
| 型号： | APT4018BN |
| 元件分类： | JFETs |
| 英文描述： | 29 A, 400 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件页数： | 2/4页 |
| 文件大小： | 93K |
| 代理商： | APT4018BN |
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
MIN
TYP
MAX
360
APT4016BN
124
APT4018BN
116
MIN
TYP
MAX
APT4016BN
31
APT4018BN
29
APT4016BN
124
APT4018BN
116
1.3
350
700
4.5
9
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 0.5 VDSS
I
D = ID [Cont.] @ 25°C
V
GS = 15V
V
DD = 0.5 VDSS
I
D = ID [Cont.] @ 25°C
R
G = 1.8
MIN
TYP
MAX
2850
3500
690
900
280
400
130
200
20
30
60
90
15
30
42
84
90
135
65
130
UNIT
pF
nC
ns
APT4016/4018BN
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions / Part Number
Continuous Source Current
(Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (I
S = -ID [Cont.], dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -ID [Cont.], dlS/dt = 100A/s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
C
Test Conditions / Part Number
V
DS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
I
DS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Inductive Current Clamped
UNIT
Watts
Amps
SAFE OPERATING AREA CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
050-4008
Rev
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT4018BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 29A I(D) | TO-247AD |
| APT4018HVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT401R | 制造商:Pneumatic Components Ltd 功能描述:10MM REVERSIBLE DRILL |
| APT4020 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT4020AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22.5A I(D) | TO-3 |
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