参数资料
型号: APT40GP60JDQ2
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 86 A, 600 V, N-CHANNEL IGBT
封装: ISOTOP-4
文件页数: 4/9页
文件大小: 551K
代理商: APT40GP60JDQ2
050-7494
Rev
A
6-2005
APT40GP60JDQ2
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 5
L = 100 H
V
CE = 400V
T
J = 25°C, TJ =125°C
R
G = 5
L = 100 H
V
GE = 15V
T
J = 25 or 125°C,VGE = 15V
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
20
40
60
80
100
0
20
40
60
80
100
0
20
40
60
80
100
0
20
40
60
80
100
0
20
40
60
80
90
0
20
40
60
80
100
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 5, L = 100H, VCE = 400V
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
R
G = 5, L = 100H, VCE = 400V
VCE = 400V
VGE = +15V
RG = 5
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
VCE = 400V
VGE = +15V
RG = 5
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
100
80
60
40
20
0
100
80
60
40
20
0
2000
1500
1000
500
0
3000
2500
2000
1500
1000
500
0
E
on2,80A
E
off,80A
E
on2,40A
E
off,40A
E
on2,20A
E
off,20A
VCE = 400V
VGE = +15V
TJ = 125°C
VCE = 400V
VGE = +15V
RG = 5
E
on2,80A
E
off,80A
E
off,40A
E
on2,40A
E
on2,20A
E
off,20A
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